Strain-engineered oxide thin films for tailored electronic and magnetic functionality

We develop heteroepitaxial thin-film materials that enable precise control of lattice strain, symmetry, and composition to design and stabilize novel functional properties in oxides, nitrides, and alloys. These materials provide a pathway to engineer electronic, magnetic, and optical behaviors beyond what is achievable in bulk, opening new opportunities for next-generation electronics, spintronics, sensors, and energy devices.

Current approaches to complex oxide synthesis are limited in their ability to stabilize metastable phases or independently tune multiple functional parameters, creating a critical need for methods that offer atomic-level control and reproducibility.

Our platform combines pulsed laser deposition (PLD) and sputtering with substrate-driven strain and interface engineering to achieve deterministic control over lattice, band structure, and defect chemistry. This enables the design of emergent material behaviors, including enhanced conductivity, magnetism, ferroelectricity, and optical response.

To date, we have produced high-quality epitaxial films with atomically abrupt interfaces, demonstrated controlled phase stabilization, and reported these results in peer-reviewed publications. Prototype devices built from these films exhibit robust performance, demonstrating the feasibility of scaling and integration into functional devices.

We are seeking collaborations and partnerships to expand the application of these materials in advanced devices, explore new metastable phases, and scale synthesis toward wafer-level integration for research and industrial applications.