Si CMOS compatible SWIR photodetectors using indium nitride nanostructures

Overview

The development of silicon CMOS compatible short-wavelength infrared (SWIR) photodetectors using indium nitride (InN) nanowires represents a significant advancement in photodetection technology. Utilizing the molecular beam epitaxy process, these photodetectors offer a wide optical bandgap tuning range, making them highly suitable for applications that require detection across the 900 nm to 1700 nm spectrum. This technology leverages the unique properties of InN and other III-nitride materials to create highly efficient photodetectors that can be integrated with existing silicon technologies.

Technical specifications

• Approach I: Utilizes InN nanowires epitaxially grown on silicon. Proven techniques include p-type doping and the creation of p-i-n InN junctions capable of emitting light at ~1.7 um. This approach facilitates photodetection in the SWIR range by incorporating gallium (Ga).
• Approach II: Involves planar growth of InN on silicon, allowing the integration of mismatched materials. This is supported by the PI's recent innovations in molecular beam epitaxy.
• Phase I Validation: Focuses on optimizing the growth of InN and InGaN nanowires, characterizing electrical doping properties, and testing the photoresponse of InGaN/InN diodes under various light sources.
• Phase II Development: Aims to enhance performance through quantum confined structures and core-shell structures to achieve high quantum efficiency and low dark current.

Technology readiness level

The project is currently at Technology Readiness Level 4, indicating that the basic technological components have been integrated, and the fabrication and testing of the prototypes are underway. The subsequent phases will focus on performance enhancements and further validation through experimental testing.