Cmos-compatible SWIR photodetector with SAG ingaas on si
A CMOS-compatible SWIR photodetector platform featuring selective area growth (SAG) of InGaAs on Si. Utilizes nano-electrodes for enhanced photocurrent in the 900–1700 nm range, offering a cost-effective and scalable alternative to traditional InP-based detectors.
Overview
This cutting-edge SWIR photodetector platform leverages the selective area growth (SAG) of InGaAs on silicon (Si) substrates to create a cost-effective, high-performance solution for detecting short-wave infrared (SWIR) light in the 900–1700 nm range. By replacing traditional InP substrates with Si and avoiding quantum dots or RoHS-regulated materials, this platform provides a scalable and manufacturable alternative suitable for various industry applications.
Technical specifications
- Material Composition: InₓGa₁₋ₓAs (0 ≤ x ≤ 0.53) grown on Si using molecular beam epitaxy.
- Architecture: Utilizes anisotropically etched Si <111> planes to confine defects and support high-quality InGaAs growth.
- Nano-Electrodes: Atomic layer lithography defines nano-electrodes with 2–10 nm gaps that bridge InGaAs ribbons, enhancing photocurrent generation.
- Performance Metrics: Optoelectronic characterization includes dark current, quantum efficiency, and spectral response.
- Scalability: Designed for wafer-scale production, enabling cost-effective manufacturing.
Technology readiness level
This technology is currently at TRL 3, with initial validation through optoelectronic testing and performance characterization underway. Future phases will focus on device integration, performance optimization, and scaling up fabrication to full wafer sizes.
About University of Tennessee, Knoxville
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