Cryogenic memory array: ferroelectric SQUID storage with heater cryotron selectors
A novel cryogenic memory array using ferroelectric SQUIDs as storage elements and Heater Cryotrons as selector devices in a coupled device. The scalable array averts conventional superconducting memory topologies and their bulky peripheral circuits, operating under 4 Kelvin.
The problem
Cryogenic memory devices designed to operate at or below 4 Kelvin are prime enablers of practical quantum computing systems and superconducting electronic platforms. Current cryo-memories suffer from issues involving limited scalability, process complexity, bulky peripherals, array-level interference, volatility, and speed incompatibility.
The solution
Researchers at the University of Tennessee have designed a novel cryogenic memory array using ferroelectric SQUIDs as storage elements and Heater Cryotrons as selector devices in a coupled device. This scalable cryo-memory array combines the unique characteristics of an FeSQUID and an hTron, averting conventional superconducting memory topologies by using inducting coupling and bulky peripheral circuits. This technology has a revolutionary potential within the field of quantum computing and supercomputing electronics.
Benefits
- Scalable memory platform with separate read-write paths.
- Allows for smaller physical distance between components for improved computing power, weight reduction, and space saving.
- Combined memory technology that can operate under 4 Kelvin, allowing for use in quantum computing and superconducting electronic platforms.
Patent status
Patent Pending
About University of Tennessee, Knoxville
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