Innovative EUV photoresists using secondary-electron-induced phase change enhance lithography precision. They exhibit high EUV absorptivity and compatibility with various etching processes, enabling ultrathin uniform coatings for high-resolution patterning.
The proposed technology introduces a novel class of EUV photoresists that leverage secondary-electron-induced phase change to improve the precision of lithographic processes. This innovation addresses common challenges in EUV lithography, such as line-edge roughness, by utilizing elements like Sb, Te, and V, which strongly absorb EUV photons. The resulting phase change in the photoresist material creates distinct regions with varying etch resistance or solubility, enhancing pattern fidelity and resolution.
The technology is at TRL 3, indicating that experimental proof of concept has been demonstrated through controlled laboratory testing. Future validation plans include Monte Carlo simulations, precise film deposition, and pattern evaluation using e-beam lithography, aiming for sub-20 nm pitch performance.
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