Utilizing Pulsed Laser Deposition (PLD) for the epitaxial growth of nitride semiconductors like GaN, with precise control over film composition and reduced defects, suitable for optoelectronic applications.
This research focuses on the epitaxial growth of nitride-based semiconductors, such as GaN, using Pulsed Laser Deposition (PLD). PLD is advantageous due to its precise control over stoichiometry, enabling the growth of high-quality, defect-minimized films. This process is particularly suitable for producing semiconductors for optoelectronic applications, including LEDs and laser diodes.
Key features:
Currently at TRL 3, the technology is in the experimental proof of concept stage. The process involves several phases, including parameter optimization and film deposition, followed by structural and electrical characterization to validate quality and device-grade potential. Future validation will focus on scalability for industrial applications.
Pittsburg State University is a comprehensive public university in southeast Kansas enrolling nearly 6,000 students and pairing applied learning with regional impact. Industry collaboration is anchored by the Kansas Technology Center, a 278,700‑sq‑ft facility with close to 70 technical laboratories and extensive, industry‑supplied equipment. Materials‑focused R&D is co‑located at the Tyler Research Center—home to the National Institute for Materials Advancement and the Kansas Polymer Research Center—while a new prove‑out facility next door will let companies test materials and processes on the path to commercialization. Downtown, the Block22 innovation district adds incubator, co‑working, and makerspace assets and ties into the university’s business outreach centers and the region’s Small Business Development Center. This ecosystem is backed by competitive federal and state funding, including recent investments to launch a Center for Commercialization.