This advanced solution leverages pulsed laser deposition (PLD) for the heteroepitaxial growth of nitride semiconductors, offering advantages in uniformity and surface smoothness over traditional methods. Suitable for applications in semiconductors and superconductors.
Our solution focuses on the epitaxial growth of nitride-based semiconductors using pulsed laser deposition (PLD). This method offers significant advantages over traditional techniques like metal-organic chemical vapor deposition (MOCVD), including lower deposition temperatures and smoother, more uniform films. This innovation is particularly relevant for the development of high-performance semiconductors and superconductors, supporting advancements in fields such as commercial nuclear fusion.
Key features:
This technology is currently at TRL 2, indicating that the concept and application have been formulated. Ongoing validation efforts include testing on preferred substrates and characterizing the films under various conditions to optimize performance.
University at Buffalo is a comprehensive public research university and a leading campus in the State University of New York system. Industry engagement is anchored by co-located labs on a downtown medical campus, a research and technology park with incubators, shared core facilities, and co-op talent pipelines. Partnerships with regional hospitals enable clinical studies and translation, while proximity to the U.S.–Canada border and the binational Great Lakes corridor facilitates cross‑border collaboration. Research is supported by competitive federal funding from NIH, NSF, DOE, and DoD, alongside New York State innovation programs. A dedicated technology transfer office provides IP management, licensing, and startup support.