Fast growth of high-quality nitride semiconductors at low temperature

Overview

The proposed solution introduces a CO₂ laser-assisted metal organic chemical vapor deposition (MOCVD) method for growing high-quality gallium nitride (GaN) semiconductors. This innovative approach addresses the high manufacturing costs and limited adoption of III-V compound semiconductors by achieving rapid growth of GaN films at significantly lower temperatures and costs compared to traditional methods such as MOCVD, MBE, and HVPE. The technique supports growth on low-cost substrates like silicon and sapphire, with deposition rates reaching up to 25.8 µm/h.

Technical specifications

• Method: CO₂ laser-assisted MOCVD
• Substrate Compatibility: Silicon and sapphire
• Growth Temperature: 250–600°C
• Deposition Rate: Up to 25.8 µm/h
• Features: Rapid growth of m-plane GaN films and low-temperature growth of c-axis oriented GaN films
• Validation Techniques: AFM, TEM, XRD, and Raman analysis

Technology readiness level

This technology is currently at a TRL of 4, indicating that it has been validated in laboratory settings with ongoing efforts to scale and assess cost-effectiveness for industrial applications.