Co-development of new hybrid organic-inorganic EUV resist materials using vapor phase infiltration (VPI) and sequential infiltration synthesis (SIS) to enhance EUV lithography performance.
The Georgia Institute of Technology, in collaboration with industry partners, is pioneering the development of hybrid organic-inorganic EUV resist materials. By leveraging vapor phase infiltration (VPI) and sequential infiltration synthesis (SIS), this co-development aims to advance EUV lithography processes. The project combines cutting-edge VPI/SIS processing technology with polymer chemistry expertise to create novel resist chemistries. These new materials are designed to achieve precise inorganic loading and maintain desired line widths and edge roughness, improving hard mask performance critical for next-generation semiconductor manufacturing.
The project is at Technology Readiness Level 3, indicating that it is in the active research and proof of concept stage, with ongoing validation and testing in laboratory settings.
Georgia Institute of Technology is a large, technology‑focused public research university in Atlanta with a strong applied research culture. Industry engages through the Georgia Tech Research Institute for contract R&D, a Midtown innovation district with co‑located corporate labs, and a statewide manufacturing extension to support scale‑up. A long‑standing partnership with a major academic medical center enables clinical translation, and a large co‑op program delivers a steady talent pipeline. Research is backed by competitive federal funding from NSF, NIH, DOE, DoD, and NASA. Technology commercialization is managed by the Georgia Tech Research Corporation, with dedicated licensing, corporate contracting, and startup support.