Atomic layer annealing for improved nitride semiconductor crystallinity

Overview

Atomic layer annealing (ALA) is an innovative technique designed to improve the crystallinity and purity of nitride semiconductor materials. Developed in collaboration with UC San Diego, this method integrates plasma-enhanced atomic layer deposition with a cyclic low-energy ion bombardment process. ALA allows for the formation of single crystal aluminum nitride on amorphous substrates at relatively low temperatures (300°C). This advancement holds significant promise for applications in the electronics industry, particularly for devices requiring high-quality epitaxial thin films.

Technical specifications

The ALA process utilizes a combination of thermal atomic layer deposition chemistry and ion bombardment to achieve superior film quality. Key components include:

• Chamber construction: Underway and expected to complete by Q3/Q4 2025.
• Ion bombardment: Utilizes argon ions to enhance film crystallinity.
• Chemical precursors: H2/N2 mix, ammonia, tris(dimethylamido)aluminum, and tris(dimethylamido)gallium.
• Materials: Capable of processing aluminum and gallium nitride.

This method focuses on optimizing the growth rate and interface quality by enhancing surface chemical reactions. The approach addresses critical challenges in substrate surface preparation, which is essential for high-quality thin film deposition.

Technology readiness level

Currently, this technology is at TRL 3, indicating experimental proof of concept. The system is under construction and will undergo initial testing and validation between Q4-2025 and Q1-2026. Future work will involve refining target chemistries and characterizing film properties against established metrics, with ongoing collaboration with sponsors to define specific project requirements.