Innovative broad-beam ion source technology enhances the crystallization of GaN thin films on silicon substrates, enabling cost-effective production and improved active layers for semiconductor applications.
The broad-beam plasma source technology significantly improves the physical vapor deposition (PVD) process for GaN thin films. By utilizing an innovative ion source, this method enhances the crystallization of GaN buffer layers on silicon substrates. This advancement in deposition technology offers a cost-effective solution for the semiconductor industry, as it aims to reduce defects and increase dopant densities, making GaN suitable for active layer applications.
The broad-beam ion source technology provides several advantages over conventional methods:
The process involves coupling plasma discharges between the ion source and sputtering magnetron to achieve high deposition rates and reduced film damage. Key parameters such as ion energy, flux, sputtering power, and gas ratios are optimized using Bayesian statistics.
Currently, this technology is at TRL 3, with plans for further validation through simulation and experimental diagnosis to understand plasma coupling mechanisms and enhance the design of plasma sources.
Michigan State University is a major public land‑grant research university with a comprehensive academic portfolio and a large research enterprise. Industry partners engage through an on‑campus U.S. Department of Energy national user facility and shared core laboratories with user access. The university provides a chemical process scale‑up pilot plant on Michigan’s lakeshore, a research and technology park, and a Grand Rapids health innovation campus linking researchers with clinical partners. A statewide extension network supports field deployment and workforce training across Michigan’s manufacturing corridor. Research is backed by competitive federal funding from NSF, NIH, DOE, USDA, and DoD, while dedicated tech transfer and corporate engagement teams—supported by an affiliated research foundation—accelerate IP, licensing, startups, and sponsored research.