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Shortwave infrared (SWIR) photodetectors are utilized in a wide range of applications, including night vision, spectroscopy, remote sensing, and biomedical imaging. These detectors enable imaging beyond the visible spectrum, making them essential for environments with low lighting, material identification, and non-invasive medical diagnostics. 

Currently, Indium Gallium Arsenide (InGaAs) is the most widely used semiconductor material for SWIR detection due to its high sensitivity and fast response time. However, InGaAs-based detectors are expensive to manufacture, particularly for detecting longer wavelengths. Additionally, they are primarily fabricated on indium phosphide (InP) substrates, which limits their ability to integrate with complementary metal-oxide-semiconductor (CMOS) technology, the standard platform for modern electronic and imaging systems. This lack of CMOS compatibility poses a barrier to widespread adoption.  

To address these issues, research is advancing on new materials that offer both lower costs and higher performance, with a focus on improving CMOS compatibility and manufacturability.